Open Laboratory of Key Disciplines of Optoelectronic Information Materials and Devices in Henan Province

publish date:  05/27/2018 12:17 PM

In the 21st century one of the most important areas is information technology that gradually become the core of social operation due to the combination of computer, network and communication. Since the 20th century, the development of community features electronic information that information is carried by electronics. However, with the development of high capacity and high speed information, the limitations of electronics and microelectronics has been revealed at present. A proposed scheme to raise the transmission speed and carrier density is utilization of photons, which can be summarized as the following key advantages: the speed of photons is much greater than that of electronic; and optical frequency is much higher than radio’s (e.g microwave). These advantages can make remarkable advances in information technology. Today, photonic and electronic together participate in information’s detection, transmission, storage, display, operation and processing. Therefore, more and more people recognize the importance and great application prospects of photoelectron technology owing to its’ rapid development in the past two decades. For instance, the electronic and photonic materials, and microelectronics, as well as optical electronic, have been listed as national key technology by United States, namely, “Photonics have a profound impact in national security and economic competition” and “The future of research and development associated with communication and computer belongs to photonics”. A cross-century development that electronics to optoelectronics and then to photonics, make people convince that the fastest development and the most promising of information materials are optoelectronic materials and photonic materials, respectively. Photonics and photon technology play more and more important role to promote the development of information science and technology, as an important pillar, which complement and mutually penetrate with new material technology each other. Photonic material and technology have become an active research topic in current international science and technology industry, attracted considerable attention from all over the world to reveal its new physical characteristics and novel photonic devices. The focus of our laboratory is on the behavior of the photon, as carrier for information and energy in information photonics technology, and it’s applications in new material, new devices and new process are also attracted our attention. Specifically, we theoretically investigate the photophysical properties of information function material, and photon process including physical phenomena, effect and laws, as well as the intriguing features exhibiting in photoelectric device, and so on. In application, the main researches are summarized in new structure of photonic material, the material of the photons and optoelectronic devices. The new ideas, new methods, new material and new technique are also proposed by us in structural multi-function, miniaturization and integration of device.

The information technology, including acquisition, transmission, storage, display and processing, rely on the development of the information function material and devices. The core of photonics technology is composed by solid-state lighting devices (such as lasers, solid-state white light source), various energy storage (such as CD), and detector and sensor in different energy regions.

Combined with the needs of development of national economy in our province and photonic technology research, as well as academic advantages of our laboratory, the main research directions can be summarized as the follows:

1. Ultraviolet optoelectronic device and technology

(1) The investigation on semiconductor heterojunction nanomaterials, including the oxide semiconductor Sb-SnO2, TiO2, SrTiO3, Bi2O3 and (Cu2Sn) x/3Zn1-xS; the main factors affect the generation, transmission and composite of photoproduction charge in semiconductor; (2) the fluoride oxide microcrystalline glass is prepared with high temperature melting method, upper conversion and lower conversion luminescence are realized in mixed Ce3 +, Er3+ and Yb3+ at the same time, which can effectively generate the red light and be applied to greenhouse glass; (3) the improving preparation process of perovskite battery cathode promotes to the efficiency of battery. At present photoelectric conversion efficiency excessds 10%; (4) we successfully prepare TiO2 nano light catalyst with fluytrium and fluorine zinc doping, and discusse the light absorption and the mechanism of photocatalytic activity change in this case; (5) the preparation of ZnS/PVP, CdS/PEG and PbSe/PVA polymer nanocomposites is completed, whose the third order nonlinear optical properties is found that II-VI semiconductor/transparent ones characterize large nonlinear polarizability coefficients, and has potential applications in photonic devices. (6) Cd II -VI semiconductor multi-walled carbon nanotube composite materials are synthesized with wet chemical method, studied the third-order nonlinear optical properties, nonlinear absorption and refractive coefficient of which have been obtained, respectively. This work establishes experimental foundation to application of laser technology Q switch and locking device.

2. The holographic storage material and technology

(1) Photopolymerization systems, such as acrylamide, triethanolamine and methylene blue, are doped by quantum dots of Al2O3 and PbSe to improve the material's anti-wrinkle resistance and exposure sensitivity, increase the modulation of refractive index, improve the density and capacity of information recording; (2) combined with double dye or riboflavin sensitized holographic recording light induced polymer, high-density digital holographic storage polymer thick film characterized wide exposure sensitivity range, high diffraction efficiency, high sensitivity and wet resistance is synthetic, of which sensitive wavelength range and maximum diffraction efficiency are more than 200 nm and 93%, respectively; (3) based on the lighting structure of digital holographic microscopy, we can realize the tiny objects of amplitude and phase of super resolution imaging and phase imaging resolution.

3. The material design and simulation

The research objects are several Zintl phase and oxides thermoelectric materials, studied the electronic structure and thermoelectric property. By rigid band model we investigate the influence of different doping types and concentrations: (1) N-type doping of Sr3GaSb3 can significantly improve the thermoelectric property, and maximum ZT value is 1.74; (2) N-type doping of Sr5Sn2As6 can result in high Seebeck coefficient and electrical conductivity, and maximum ZT can can reach 3; (3) P-type doping of Rb2Zn5As4 feature better thermal property, and the appearance of heavy and light belt in the top of valence band at the same time will improve the thermoelectric performance; (4) A5M2Pn6 (A is Ca, or Sr or Ba; M is Ga or Al; Pn is As or Sb), the electronegativity difference between Pn and A, as well as Pn and M can greatly affect the band gap, whose size can be easily controlled through selecting the appropriate element to improve the thermoelectric property; (5) N-type BiCuSeO is characterized by higher conductivity, and the thermoelectric property is also far better than P-type one; (6) Al and Ga doping will lead to the decreases of ZnO nanowires band gap, while Sb doping will increase it; (7) ZT value of N-type CuGaTe2 will increase to 2.1 at 950 K, which is 25% higher than that of P-type.