Electronic thin films and devices
Introduction:
Thin film transistor is a kind of field-effect transistor, which is composed of conductive layer, semiconductor layer and insulating layer deposited on the substrate. It is developed to meet the needs of full film integrated circuit. At present, thin film transistors are mainly divided into three categories: silicon-based thin-film transistors, organic thin-film transistors and oxide semiconductor thin-film transistors. Oxide TFT has attracted the attention of researchers at home and abroad, and more and more literatures reported the related research progress. The advantages of oxide TFT, such as high mobility, low preparation temperature and high transparency, attract researchers and manufacturers to develop new materials and processes, and then prepare different kinds of TFT. As the core device of modern flat panel display, the performance of thin film transistor directly determines the performance of flat panel display. At present, oxide semiconductor as channel layer material of thin film transistor has been widely concerned. Because of its low preparation temperature, rich raw materials, high mobility, good uniformity and good optical performance, oxide TFT has great development potential in the field of active matrix devices such as liquid crystal display (LCD), organic light emitting diode (OLED).
Oxide thin film resistor switched memory (ReRAM) has the advantages of fast read/write speed, excellent endurance and super long storage stability. It has simple structure, low power consumption, and is compatible with the current silicon-based semiconductor integrated technology. It is one of the most potential nonvolatile memories in the new generation, and is considered as one of the powerful candidates for the next generation of "universal" memory. Moreover, 3D crossbar technology can not only increase the integration level, but also form new semiconductor integrated circuits with semiconductor field-effect transistors, diodes and selectors. Therefore, it has attracted much attention of researchers. The principle of the flip resistance is that the resistance is in the state of two or more cycles. It is called resistance switching effect. At present, the resistance switching effect in many materials has been found, which can be roughly divided into three categories: binary metal oxides, multi-element metal oxides and organic compounds. The materials with resistance switching properties at room temperature are favored by researchers. Many novel materials, such as perovskite and oxide, have been found in this field. In order to reveal the real dynamic reason of this strange effect, many research achievements have been made so far.
Group members
1. Dr. Xinan Zhang, Email:xinanzhang@henu.edu.cn
2. Dr. Xianwen Sun, Email:sunxianwen@henu.edu.cn
3. Dr. Wei Ling, Email: weiling@henu.edu.cn
4. Dr. Yanfeng Yin, Email: yinyf@henu.edu.cn
Selected Publications:
1. Xinan Zhang; binghao wang; Wei Huang; Gang Wang; Weigang Zhu; Zhi Wang; Weifeng Zhang; Antonio Facchetti; Tobin J. Marks, Oxide-Polymer Heterojunction Diodes with a Nanoscopic Phase Separated Insulating Layer, Nano letters, 2019.01.10, 19(1): 471~476
2. Xinan Zhang; binghao wang; Wei Huang; Yao Chen; Gang Wang; Li Zeng; Weigang Zhu; Michael J. Bedzyk; Weifeng Zhang; Julia E. Medvedeva; Antonio Facchetti; Tobin J. Marks, Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory, Journal of the American Chemical Society, 2018.10.3, 140: 12501~12510
3. Xinan Zhang; Binghao Wang; Xianwen Sun; Haiwu Zheng; Shuang Li; Penglin Zhang; weifeng zhang, Highly Transparent and Conductive W-Doped ZnO/Cu/W-Doped ZnO Multilayer Source/Drain Electrodes for Metal-Oxide Thin-Film Transistors, IEEE Electron Device Letters, 2018.7.20, 39(7): 967~970
4. shang li; Xinan Zhang*; Penglin Zhang; Xianwen Sun; Haiwu Zheng; Weifeng Zhang, Preparation And Characterization Of Solution-Processed Nanocrystalline P-Type Cualo2 Thin-Film Transistors, Nanoscale Research Letters, 2018.8.30, 13(259)
5. RuiJuan Zhu; Xinan Zhang*; JunWei Zhao; RuoPing Li; WeiFeng Zhang, Influence of illumination intensity on the electrical characteristics and photoresponsivity of the Ag/ZnO Schottky diodes, Journal of Alloys and Compounds, 2015.5.15, 631: 125~128
6. Shengkai Wang; Xianwen Sun*; Guanghui Li; Caihong Jia; Guoqiang Li; Weifeng Zhang, Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions, Nanoscale Research Letters, 2018.01.12, 13:18.
7. Xianwen Sun; Caihong Jia; Xiansheng Liu; Guoqiang Li; Weifeng Zhang*, Bias Polarity-Dependent Unipolar Switching Behavior in NiO/SrTiO3 Stacked Layers, Chinese Physics B, 2018.03.10, 27(4): 047304.
8. Ling Wei, Shuai Li, Sanjoy Kumar Nandi and Robert Glen Elliman, Forming-free bipolar resistive switching and quantum conductance in NiO/FTO structures, J. Phys. D: Appl. Phys. 2019, 52, 465305.
