Name: xinan zhang

Gender:Male Position:Associate Professor

E-mail:xinanzhang@henu.edu.cn Department:Key Laboratory of Photovoltaic Materials

Short Biography:

1995.9-1999.7 Physics Department, Henan University (Bachelor)

2002.9-2005.7 School of Physics and Electronics, Henan University (Master)

2005.9-2009.7 School of Electronic and Information Engineering, Xi’an JiaoTong University (PHD)

2015.12- Now Northwestern University, USA (Visiting Researcher)

Research interests:

1. Metal Oxide Thin Film Transistor

2. High-k Material and Application

3. Organic/Inorganic Hybrid Material and Device

Major publications:

1.Junwei zhao,XinAn zhang*, etc., Performances of transparent indium zinc oxide thin film transistors using ZrO2 as dielectric processed by solution method, physica status solidi (a), 2017, 214(1):1600315

2.RuiJuan Zhu,XinAn zhang*, etc., Influence of illumination intensity on the electrical characteristics and photoresponsivity of the Ag/ZnO Schottky diodes，Journal of Alloys and Compounds, 2015,631:125-128

3.张新安，等，一种栅压控制的透明场效应紫外探测器及其制备方法，2017年，授权号：CN105514211B