Name: Dong Chen
Gender: Female Position: Associate Professor
E-mail: dongchen@henu.edu.cn Department: College of Physics and Electronics
Short Biography:
2014 to 2015: Visiting Assistant Research Scientist, Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, USA.
2010 to present: Associate Professor, College of Physics and Electronics, Henan University, Kaifeng, China.
2006-2010: Ph.D. in Material Science and Engineering, Hunan University, Changsha, China.
2008-2010: Joint Ph.D. in Fundamental & Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, USA.
2003-2006: M. S. in Condensed Matter Physics, Henan Normal University, Xinxiang, China.
Research interests:
My present work focuses mainly on theoretical simulation to study materials physics and materials science:
Nanostructured Materials, such as Metal and Alloy Nanoparticles;
Electronical properties of 2D materials;
Surface and Nanoparticles of Adsorption and Catalysis;
Dynamic Behaviors of Defects;
Structural Preferences of Biomolecules.
Major publications:
1. D. Chen, F. Gao, Bo Liu, Grain boundary resistance to amorphization of nanocrystalline silicon carbide, Scientific Reports，2015，5.
2. D. Chen, F. Gao, M. Dong, B. Liu, Migration of point defects and a defect pair in zinc oxide using the dimer method, Journal of Materials Research, 2012, 27(17): 2241-2248.
3. D. Chen, Wangyu Hu, Fei Gao, Huiqiu Deng and Lixian Sun, Tungsten cluster migration on nanoparticles: minimum energy pathway and migration mechanism，The European Physical: Journal B, 2011, 80(1): 31-40. (COVER PAPER)
4. D. Chen, F. Gao, W. Hu, S. Y. Hu，D. Terentyev, X. Sun, H. L. Heinisch, C. H. Henager, and M. A. Khaleel, Migration of Cr-Vacancy clusters and interstitial Cr in α-Fe using the dimer method，Physical Review B，2010，81(6): 064101-064109.
5. F. Gao, D. Chen, W. Hu, W. J. Weber, Energy dissipation and defect generation in nanocrystalline silicon carbide, Physical Review B, 2010, 81(18): 184101-184108.
